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Characterization of the Post Dry Etch Cleaning of the Silicon Surface Prior to Silicon Epitaxial Growth

Journal Solid State Phenomena (Volumes 65 - 66)
Volume Ultra Clean Processing of Silicon Surfaces IV
Edited by Marc Heyns, Marc Meuris and Paul Mertens
Pages 97-100
DOI 10.4028/www.scientific.net/SSP.65-66.97
Citation Y.B. Kim et al., 1998, Solid State Phenomena, 65-66, 97
Authors Y.B. Kim, Matty Caymax, H. Bender, Serge Vanhaelemeersch
Keywords Epitaxial Growth, Hydrogen Anneal, MIR-IR, Plasma Etching, Post Cleaning, SIMS, X-Ray Photoelectron Spectroscopy (XPS)
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