Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing |
| Journal |
Solid State Phenomena (Volumes 67 - 68) |
| Volume |
Polycrystalline Semiconductors V |
| Edited by |
J.H. Werner, H.P. Strunk, H.W. Schock |
| Pages |
39-44 |
| DOI |
10.4028/www.scientific.net/SSP.67-68.39 |
| Authors |
E.B. Yakimov,
Olga V. Feklisova,
Maurizio Acciarri,
Anna Cavallini,
Sergio Pizzini
|
| Keywords |
Deep Level Transient Spectroscopy, Deep Levels, Oxygen Precipitates, Silicon, Thermal Treatment |
| Full Paper |
Get the full paper by clicking here
|
