Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing |
| Journal |
Solid State Phenomena (Volumes 67 - 68) |
| Volume |
Polycrystalline Semiconductors V |
| Edited by |
J.H. Werner, H.P. Strunk, H.W. Schock |
| Pages |
39-44 |
| DOI |
10.4028/www.scientific.net/SSP.67-68.39 |
| Citation |
Eugene B. Yakimov et al., 1999, Solid State Phenomena, 67-68, 39 |
| Authors |
Eugene B. Yakimov, Olga V. Feklisova, Maurizio Acciarri, Anna Cavallini, Sergio Pizzini |
| Keywords |
Deep Level, Deep Level Transient Spectroscopy, Oxygen Precipitates, Silicon, Thermal Treatment |
| Full Paper |
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