Materials Science & Technology

FULLTEXT SEARCH
NEW: Advanced Search

Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing

Journal Solid State Phenomena (Volumes 67 - 68)
Volume Polycrystalline Semiconductors V
Edited by J.H. Werner, H.P. Strunk, H.W. Schock
Pages 39-44
DOI 10.4028/www.scientific.net/SSP.67-68.39
Citation Eugene B. Yakimov et al., 1999, Solid State Phenomena, 67-68, 39
Authors Eugene B. Yakimov, Olga V. Feklisova, Maurizio Acciarri, Anna Cavallini, Sergio Pizzini
Keywords Deep Level, Deep Level Transient Spectroscopy, Oxygen Precipitates, Silicon, Thermal Treatment
Full Paper PDF Get the full paper by clicking here

First page example

Preview of first page