Wet-Chemically Passivated Silicon Interfaces: Characterization by Surface Photovoltage Measurements, and Spectroscopic Ellipsometry Methods |
| Journal |
Solid State Phenomena (Volumes 67 - 68) |
| Volume |
Polycrystalline Semiconductors V |
| Edited by |
J.H. Werner, H.P. Strunk, H.W. Schock |
| Pages |
515-520 |
| DOI |
10.4028/www.scientific.net/SSP.67-68.515 |
| Citation |
H. Angermann et al., 1999, Solid State Phenomena, 67-68, 515 |
| Authors |
H. Angermann, W. Henrion, A. Röseler, M. Rebien |
| Keywords |
Ellipsometry, Silicon, Surface Morphology, Surface Photovoltage Measurements, Surface State Distribution |
| Full Paper |
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