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An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors

Journal Solid State Phenomena (Volumes 67 - 68)
Volume Polycrystalline Semiconductors V
Edited by J.H. Werner, H.P. Strunk, H.W. Schock
Pages 553-558
DOI 10.4028/www.scientific.net/SSP.67-68.553
Citation U. Rau et al., 1999, Solid State Phenomena, 67-68, 553
Authors U. Rau, Jens Werner
Keywords Capacitance, Grain Boundary, Schottky Contact, Tunneling
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