Modelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structure |
| Journal |
Solid State Phenomena (Volumes 67 - 68) |
| Volume |
Polycrystalline Semiconductors V |
| Edited by |
J.H. Werner, H.P. Strunk, H.W. Schock |
| Pages |
559-564 |
| DOI |
10.4028/www.scientific.net/SSP.67-68.559 |
| Citation |
H. Dib et al., 1999, Solid State Phenomena, 67-68, 559 |
| Authors |
H. Dib, Z. Benamara, A. Boudissa, Baya Zebentout, R. Naoum, F. Raoult, O. Bonnaud |
| Keywords |
Capacitance, Polysilicon Doping, Polysilicon/Oxide/Silicon, Simulation, Voltage Characteristics |
| Full Paper |
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