Paper Title:
Modelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structure
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 67-68)
Edited by
J.H. Werner, H.P. Strunk, H.W. Schock
Pages
559-564
DOI
10.4028/www.scientific.net/SSP.67-68.559
Citation
H. Dib, Z. Benamara, A. Boudissa, B. Zebentout, R. Naoum, F. Raoult, O. Bonnaud, "Modelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structure", Solid State Phenomena, Vols. 67-68, pp. 559-564, 1999
Online since
April 1999
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Price
$32.00
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