Properties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain Size |
| Journal |
Solid State Phenomena (Volumes 67 - 68) |
| Volume |
Polycrystalline Semiconductors V |
| Edited by |
J.H. Werner, H.P. Strunk, H.W. Schock |
| Pages |
577-582 |
| DOI |
10.4028/www.scientific.net/SSP.67-68.577 |
| Citation |
G. Beaucarne et al., 1999, Solid State Phenomena, 67-68, 577 |
| Authors |
G. Beaucarne, Jef Poortmans, Matty Caymax, J. Nijs, A. Mertens |
| Keywords |
Chemical Vapour Deposition (CVD), p-n Diodes, p-n Junction Recombination, Solar Cell |
| Full Paper |
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