Paper Title:
Properties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain Size
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 67-68)
Edited by
J.H. Werner, H.P. Strunk, H.W. Schock
Pages
577-582
DOI
10.4028/www.scientific.net/SSP.67-68.577
Citation
G. Beaucarne, J. Poortmans, M. Caymax, J. Nijs, A. Mertens, "Properties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain Size", Solid State Phenomena, Vols. 67-68, pp. 577-582, 1999
Online since
April 1999
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Price
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