W-Polycide Gates with a Thin Polysilicon Layer: Microstructure and Resistivity |
| Journal |
Solid State Phenomena (Volumes 67 - 68) |
| Volume |
Polycrystalline Semiconductors V |
| Edited by |
J.H. Werner, H.P. Strunk, H.W. Schock |
| Pages |
583-0 |
| DOI |
10.4028/www.scientific.net/SSP.67-68.583 |
| Citation |
Y.O. Kim et al., 1999, Solid State Phenomena, 67-68, 583 |
| Authors |
Y.O. Kim, J. Bevk, M. Furtsch, G.E. Georgiou, W. Mansfield, R. Masaitis, R. Opila, P.J. Silverman |
| Keywords |
Gate Materials, Refractory Metal Silicide, Sheet Resistance, Tungsten Polycide |
| Full Paper |
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