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Polycrystalline Semiconductors V

Solid State Phenomena Volumes 67 - 68

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• p521 Improving the Quality of Polycrystalline Silicon String Ribbon for Fabricating High Efficiency Solar Cells   [ 417 K ]
  Authors: H.E.A. Elgamel, J. Gobrecht
• p529 Polycrystalline Silicon Thin Film Transistors: State of the Art and Improvement of Electrical Characteristics   [ 756 K ]
  Authors: O. Bonnaud
• p541 Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors   [ 302 K ]
  Authors: B. Tala-Ighil, A. Rahal, H. Toutah, T. Mohammed-Brahim, K. Mourgues, O. Bonnaud
• p547 Process to Fabricate High Performance Solid Phase Crystallized n-Type and p-Type Thin Film Transistors on Glass Substrate   [ 241 K ]
  Authors: K. Mourgues, F. Raoult, Youri Helen, T. Mohammed-Brahim, R. Rogel, O. Bonnaud
• p553 An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors   [ 298 K ]
  Authors: U. Rau, Jens Werner
• p559 Modelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structure   [ 266 K ]
  Authors: H. Dib, Z. Benamara, A. Boudissa, Baya Zebentout, R. Naoum, F. Raoult, O. Bonnaud
• p565 a-Si/c-Si Heterojunctions as a Tool to Realise Solar Cells Based on Thin Poly-Silicon Growth on Glass   [ 327 K ]
  Authors: R. De Rosa, Maria Luisa Grilli, G. Sasikala, M. Tucci, F. Roca
• p571 Heterojunctions for Polycrystalline Silicon Solar Cells   [ 311 K ]
  Authors: R.M. Hausner, N. Jensen, R.B. Bergmann, U. Rau, Jens Werner
• p577 Properties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain Size   [ 410 K ]
  Authors: G. Beaucarne, Jef Poortmans, Matty Caymax, J. Nijs, A. Mertens
• p583 W-Polycide Gates with a Thin Polysilicon Layer: Microstructure and Resistivity   [ 296 K ]
  Authors: Y.O. Kim, J. Bevk, M. Furtsch, G.E. Georgiou, W. Mansfield, R. Masaitis, R. Opila, P.J. Silverman