Polycrystalline Semiconductors V
Solid State Phenomena Volumes 67 - 68
doi:10.4028/www.scientific.net/SSP.67-68
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p521
Improving the Quality of Polycrystalline Silicon String Ribbon for Fabricating High Efficiency Solar Cells
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417 K
]
Authors: H.E.A. Elgamel, J. Gobrecht
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p529
Polycrystalline Silicon Thin Film Transistors: State of the Art and Improvement of Electrical Characteristics
[
756 K
]
Authors: O. Bonnaud
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p541
Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors
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302 K
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Authors: B. Tala-Ighil, A. Rahal, H. Toutah, T. Mohammed-Brahim, K. Mourgues, O. Bonnaud
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p547
Process to Fabricate High Performance Solid Phase Crystallized n-Type and p-Type Thin Film Transistors on Glass Substrate
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241 K
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Authors: K. Mourgues, F. Raoult, Youri Helen, T. Mohammed-Brahim, R. Rogel, O. Bonnaud
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p553
An Analytical Model for Rectifying Contacts on Polycrystalline Semiconductors
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298 K
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Authors: U. Rau, Jens Werner
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p559
Modelling of the Doping Effect on the Capacitance of the Metal/N-Polysilicon/Oxide/N-Silicon Structure
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266 K
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Authors: H. Dib, Z. Benamara, A. Boudissa, Baya Zebentout, R. Naoum, F. Raoult, O. Bonnaud
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p565
a-Si/c-Si Heterojunctions as a Tool to Realise Solar Cells Based on Thin Poly-Silicon Growth on Glass
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327 K
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Authors: R. De Rosa, Maria Luisa Grilli, G. Sasikala, M. Tucci, F. Roca
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p571
Heterojunctions for Polycrystalline Silicon Solar Cells
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311 K
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Authors: R.M. Hausner, N. Jensen, R.B. Bergmann, U. Rau, Jens Werner
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p577
Properties of p-n Diodes Made in Polysilicon Layers with Intermediate Grain Size
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410 K
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Authors: G. Beaucarne, Jef Poortmans, Matty Caymax, J. Nijs, A. Mertens
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p583
W-Polycide Gates with a Thin Polysilicon Layer: Microstructure and Resistivity
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296 K
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Authors: Y.O. Kim, J. Bevk, M. Furtsch, G.E. Georgiou, W. Mansfield, R. Masaitis, R. Opila, P.J. Silverman