Gettering and Defect Engineering in Semiconductor Technology VIII
Solid State Phenomena Volumes 69 - 70
doi:10.4028/www.scientific.net/SSP.69-70
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p1
Silicon Wafer Technology. Status and Overlook at the Millennium and a Decade Beyond
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446 K
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Authors: A.P. Mozer
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p13
Self-Assembling Si/SiGe Nanostructures for Light Emitters
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489 K
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Authors: K. Eberl, O.G. Schmidt, O. Kienzle, F. Ernst
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p23
The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics
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864 K
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Authors: E.A. Steinman, Vitaly V. Kveder, V.I. Vdovin, Hermann G. Grimmeiss
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p33
Acoustically Driven Optical Parameters in Ⅱ-Ⅵ Photonic Materials
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440 K
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Authors: I.V. Ostrovskii, O.A. Korotchenkov
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p43
Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures
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643 K
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Authors: Arne Nylandsted Larsen
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p53
Status, Hopes and Limitations for the Si: Er-based 1.54 μm Emitter
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461 K
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Authors: W. Jantsch, S. Lanzerstorfer, Margarita Stepikhova, H. Preier, L. Palmetshofer
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p63
Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers
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577 K
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Authors: Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, S. Sadamitsu, Eiichi Asayama, T. Ono, Y. Koike, H. Katahama
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p73
Grown-in Defects in High Temperature Annealed Si Wafers
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560 K
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Authors: N. Tsuchiya, Hideyoshi Matsushita, J. Sugamoto, Akira Kawasaki, Hiroshi Kubota
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p83
Hydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut'
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568 K
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Authors: F.A. Reboredo, Sokrates T. Pantelides
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p93
Relaxation of Misfit Induced Strain in Si-Based Heterostructures
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579 K
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Authors: S.H. Christiansen, Horst P. Strunk, H. Wawra, M. Becker, M. Albrecht
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p103
Materials Quality and Materials Cost - Are they on a Collision Course?
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279 K
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Authors: K.V. Ravi
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p111
Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
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766 K
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Authors: Jan Vanhellemont
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p121
200 GHz Potential of Si-Based Devices
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503 K
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Authors: Uwe König
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p131
Silicon Materials Engineering for the Next Millennium
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600 K
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Authors: Lionel C. Kimerling
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p143
Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
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437 K
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Authors: Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini, Sergio Pizzini, E. Susi