200 GHz Potential of Si-Based Devices |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
121-130 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.121 |
| Citation |
Uwe König, 1999, Solid State Phenomena, 69-70, 121 |
| Authors |
Uwe König |
| Keywords |
Bipolar Transistor, Field-Effect Transistor, Frequency, Gate Delay, Low Temperature Operation, Noise, Silicon Germanium |
| Full Paper |
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