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Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers

Journal Solid State Phenomena (Volumes 69 - 70)
Volume Gettering and Defect Engineering in Semiconductor Technology VIII
Edited by H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Pages 155-160
DOI 10.4028/www.scientific.net/SSP.69-70.155
Citation Eugenijus Gaubas et al., 1999, Solid State Phenomena, 69-70, 155
Authors Eugenijus Gaubas, Eddy Simoen, C. Claeys, A. Poyai
Keywords Carrier Lifetime, Co-Silicided n+p Junction Diodes, Microwave Absorption
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