Defect Control in Nitrogen Doped Czochralski Silicon Crystals |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
161-166 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.161 |
| Citation |
Atsushi Ikari et al., 1999, Solid State Phenomena, 69-70, 161 |
| Authors |
Atsushi Ikari, Katsuhiko Nakai, Y. Tachikawa, H. Deai, Y. Hideki, Yasumitsu Ohta, Naoya Masahashi, S. Hayashi, T. Hoshino, Wataru Ohashi |
| Keywords |
Crystal Originated Particles (COP), Czochralski, Gate-Oxide Integrity, Grown-in Defects, Nitrogen, Oxygen Precipitates, Silicon, TEM |
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