Paper Title:
Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures
  Abstract

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Periodical
Solid State Phenomena (Volumes 69-70)
Edited by
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Pages
167-172
DOI
10.4028/www.scientific.net/SSP.69-70.167
Citation
S. Kar, P. Zaumseil, "Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures", Solid State Phenomena, Vols. 69-70, pp. 167-172, 1999
Online since
August 1999
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Price
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