Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
167-172 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.167 |
| Citation |
S. Kar et al., 1999, Solid State Phenomena, 69-70, 167 |
| Authors |
S. Kar, P. Zaumseil |
| Keywords |
Interface States (or Traps), SiGe Quantum Well MOS Structure, Ultra-Thin Gate Oxides |
| Full Paper |
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