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Interaction between Point Defects and Dislocations in SiGe

Journal Solid State Phenomena (Volumes 69 - 70)
Volume Gettering and Defect Engineering in Semiconductor Technology VIII
Edited by H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Pages 179-184
DOI 10.4028/www.scientific.net/SSP.69-70.179
Citation Klara Lyutovich et al., 1999, Solid State Phenomena, 69-70, 179
Authors Klara Lyutovich, F. Ernst, Erich Kasper, Monika Bauer, Michael Oehme
Keywords Epitaxy, Low Temperature Growth, Misfit Stress Relaxation, Point Defect
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