Radiation Induced Defect Levels in Highly Doped n-Type Si1-xGex Strained Layers |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
185-190 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.185 |
| Citation |
Edouard V. Monakhov et al., 1999, Solid State Phenomena, 69-70, 185 |
| Authors |
Edouard V. Monakhov, Andrej Yu. Kuznetsov, H.H. Radamson, Bengt G. Svensson |
| Keywords |
Deep Level, Defect, DLTS, Heterostructures, Irradiation, Silicon-Germanium (SiGe) |
| Full Paper |
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