X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
203-208 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.203 |
| Citation |
P. Zaumseil et al., 1999, Solid State Phenomena, 69-70, 203 |
| Authors |
P. Zaumseil, H. Rücker |
| Keywords |
Double Crystal Diffractomery, SiGe Interdiffusion, Silicon |
| Full Paper |
Get the full paper by clicking here
|
