The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces Abruptness |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
221-228 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.221 |
| Citation |
L.K. Orlov et al., 1999, Solid State Phenomena, 69-70, 221 |
| Authors |
L.K. Orlov, A.V. Potapov, S.V. Ivin |
| Keywords |
Growth Kinetic, GSMBE, Interface Abruptness, Non-Stationary Process, Si/Si1-xGex Structure |
| Full Paper |
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