The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
23-32 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.23 |
| Citation |
E.A. Steinman et al., 1999, Solid State Phenomena, 69-70, 23 |
| Authors |
E.A. Steinman, Vitaly V. Kveder, V.I. Vdovin, Hermann G. Grimmeiss |
| Keywords |
Dislocations, Light Emission, Optoelectronics, SiGe/ Si Relaxation, Silicon |
| Full Paper |
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