Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
235-240 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.235 |
| Citation |
Reinhard Kögler et al., 1999, Solid State Phenomena, 69-70, 235 |
| Authors |
Reinhard Kögler, A. Peeva, W. Anwand, P. Werner, A.B. Danilin, Wolfgang Skorupa |
| Keywords |
Defect, Ion-Implantation, Metal Gettering, Silicon |
| Full Paper |
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