Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
247-252 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.247 |
| Citation |
K.L. Beaman et al., 1999, Solid State Phenomena, 69-70, 247 |
| Authors |
K.L. Beaman, J.M. Glasko, Sergei V. Koveshnikov, George A. Rozgonyi |
| Keywords |
Fe, Gettering, Ion-Implantation, MeV, Rp/2, Thermal Stability |
| Full Paper |
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