Paper Title:
Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 69-70)
Edited by
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Pages
247-252
DOI
10.4028/www.scientific.net/SSP.69-70.247
Citation
K.L. Beaman, J.M. Glasko, S. V. Koveshnikov, G. A. Rozgonyi, "Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon", Solid State Phenomena, Vols. 69-70, pp. 247-252, 1999
Online since
August 1999
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Price
$32.00
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