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Impurity Gettering Investigation in the Si-SiO2 System

Journal Solid State Phenomena (Volumes 69 - 70)
Volume Gettering and Defect Engineering in Semiconductor Technology VIII
Edited by H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Pages 267-272
DOI 10.4028/www.scientific.net/SSP.69-70.267
Citation Daniel Kropman et al., 1999, Solid State Phenomena, 69-70, 267
Authors Daniel Kropman, V. Poll, L. Tambek, Tiit Kärner, U. Abru, M. Strik
Keywords Defect, ESR, Gettering, Si-SiO2
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