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Computer Simulation of Gettering Induced Oxygen Redistribution in SOI Structures

Journal Solid State Phenomena (Volumes 69 - 70)
Volume Gettering and Defect Engineering in Semiconductor Technology VIII
Edited by H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Pages 273-278
DOI 10.4028/www.scientific.net/SSP.69-70.273
Citation V.G. Litovchenko et al., 1999, Solid State Phenomena, 69-70, 273
Authors V.G. Litovchenko, A.A. Efremov, C. Claeys
Keywords Buried Oxide, Carbon in Si, Defect Engineering, Gettering of Oxygen, Precipitation, SiO2, Vacancy
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