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Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing

Journal Solid State Phenomena (Volumes 69 - 70)
Volume Gettering and Defect Engineering in Semiconductor Technology VIII
Edited by H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Pages 291-296
DOI 10.4028/www.scientific.net/SSP.69-70.291
Citation Marko Yli-Koski et al., 1999, Solid State Phenomena, 69-70, 291
Authors Marko Yli-Koski, J. Mellin, V. Ovchinnikov
Keywords Gettering, Phosphorous Ion Implantation, Silicon, Surface Photo Voltage (SPV)
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