The Segregation Behaviour of Oxygen at Dislocations in Silicon |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
321-326 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.321 |
| Citation |
Semih Senkader et al., 1999, Solid State Phenomena, 69-70, 321 |
| Authors |
Semih Senkader, Peter R. Wilshaw, D. Gambaro, Robert J. Falster |
| Keywords |
Czochralski, Dislocations, Mechanical Strength, Oxygen, Silicon, Warpage |
| Full Paper |
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