Paper Title:
Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour
  Abstract

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Periodical
Solid State Phenomena (Volumes 69-70)
Edited by
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Pages
417-422
DOI
10.4028/www.scientific.net/SSP.69-70.417
Citation
M. Kittler, V. V. Kveder, W. Schröter, "Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour", Solid State Phenomena, Vols. 69-70, pp. 417-422, 1999
Online since
August 1999
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