Paper Title:
Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 69-70)
Edited by
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter
Pages
467-472
DOI
10.4028/www.scientific.net/SSP.69-70.467
Citation
E. Simoen, C. Claeys, N.B. Lukyanchikova, M.V. Petrichuk, N.P. Garbar, "Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs", Solid State Phenomena, Vols. 69-70, pp. 467-472, 1999
Online since
August 1999
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Price
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