Hydrogen-Enhanced Transformation of Eletrical and Structural Properties of Thin Subsurface Ion Implanted Silicon Layer in SiO2-Si Systems |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
595-0 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.595 |
| Citation |
E.I. Terukov et al., 1999, Solid State Phenomena, 69-70, 595 |
| Authors |
E.I. Terukov, B.J. Ber, V.Kh. Kudojarova, V.Ju. Davydov, A.N. Nazarov, Ja.N. Vovk, S. Ashok |
| Keywords |
Defect Passivation, Hydrogen, Ion Damage, Ion-Implantation, Raman Spectroscopy, SIMS, Si-SiO2 Interface, Structural Transformation |
| Full Paper |
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