Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
63-72 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.63 |
| Citation |
Koji Sueoka et al., 1999, Solid State Phenomena, 69-70, 63 |
| Authors |
Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, S. Sadamitsu, Eiichi Asayama, T. Ono, Y. Koike, H. Katahama |
| Keywords |
Epitaxial Wafers, Internal Gettering, Metal Impurity, Oxygen Precipitation |
| Full Paper |
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