Grown-in Defects in High Temperature Annealed Si Wafers |
| Journal |
Solid State Phenomena (Volumes 69 - 70) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology VIII |
| Edited by |
H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter |
| Pages |
73-82 |
| DOI |
10.4028/www.scientific.net/SSP.69-70.73 |
| Citation |
N. Tsuchiya et al., 1999, Solid State Phenomena, 69-70, 73 |
| Authors |
N. Tsuchiya, Hideyoshi Matsushita, J. Sugamoto, Akira Kawasaki, Hiroshi Kubota |
| Keywords |
COP, Grown-in Defects, High Temperature Annealing, Hydrogen, LSTD, Silicon, Void |
| Full Paper |
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