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Gettering and Defect Engineering in Semiconductor Technology VIII

Solid State Phenomena Volumes 69 - 70

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• p241 Iron Gettering on Cavities Produced by Helium Implantation   [ 350 K ]
  Authors: F. Roqueta, A. Grob, J.J. Grob, Christiane Dubois, J. Fauré, Laurent Ventura
• p247 Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon   [ 376 K ]
  Authors: K.L. Beaman, J.M. Glasko, Sergei V. Koveshnikov, George A. Rozgonyi
• p253 Laser-Stimulated Gettering Processes in Cd_xHg_1-xTe Solid Solutions   [ 312 K ]
  Authors: V.A. Gnatyuk, O.S. Gorodnychenko, A.V. Lomovtsev, P.O. Mozol', O.I. Vlasenko
• p259 Gettering Strength Assessment Based on Lifetime Measurements   [ 576 K ]
  Authors: F.G. Kirscht, B. Orschel, V. Higgs, A. Buczkowski
• p267 Impurity Gettering Investigation in the Si-SiO₂ System   [ 315 K ]
  Authors: Daniel Kropman, V. Poll, L. Tambek, Tiit Kärner, U. Abru, M. Strik
• p273 Computer Simulation of Gettering Induced Oxygen Redistribution in SOI Structures   [ 357 K ]
  Authors: V.G. Litovchenko, A.A. Efremov, C. Claeys
• p279 Surface Gettering Background Impurities and Defects in GaAs Plates   [ 272 K ]
  Authors: N. Shmidt, A.T. Gorelenok, Valentin V. Emtsev, Alex A. Kamanin, A.V. Markov, M. Mezdrogina, D.S. Poloskin, L. Vlasenko
• p285 Gettering Processes for the Preparation of Silicon Solar Cell Material   [ 185 K ]
  Authors: A.A. Efremov, N.I. Klyui, V.G. Litovchenko, V.G. Popov, A.B. Romanyuk, B.N. Romanyuk
• p291 Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing   [ 173 K ]
  Authors: Marko Yli-Koski, J. Mellin, V. Ovchinnikov
• p297 Oxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated Temperatures   [ 385 K ]
  Authors: J. Lennart Lindström, T. Hallberg, J. Hermansson, L.I. Murin, V.P. Markevich, Mats Kleverman, Bengt G. Svensson
• p303 Infrared Vibrational Bands Related to Thermal Donors in Germanium   [ 325 K ]
  Authors: Valentin V. Litvinov, A.A. Klechko, V.P. Markevich, L.I. Murin, J. Lennart Lindström
• p309 New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon   [ 329 K ]
  Authors: L.I. Murin, V.P. Markevich, T. Hallberg, J. Lennart Lindström
• p315 Experimental and Numerical Investigation of the Oxygen Precipitation in Mono- and Multicrystalline Solar Silicon   [ 378 K ]
  Authors: Hans Joachim Möller, L. Long
• p321 The Segregation Behaviour of Oxygen at Dislocations in Silicon   [ 197 K ]
  Authors: Semih Senkader, Peter R. Wilshaw, D. Gambaro, Robert J. Falster
• p327 About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range   [ 364 K ]
  Authors: Eugene B. Yakimov, Olga V. Feklisova, Maurizio Acciarri, Anna Cavallini, Sergio Pizzini