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Gettering and Defect Engineering in Semiconductor Technology VIII

Solid State Phenomena Volumes 69 - 70

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• p333 Positron Trapping by Oxygen-Related Defects in Silicon and Anisotropy of 1D-ACAR Spectra   [ 324 K ]
  Authors: N.Yu. Arutyunov
• p339 The Spatial Distribution of SiO₂ Precipitates Grown in Silicon at Laser Induced Centres   [ 262 K ]
  Authors: Yu. Blums
• p345 Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon   [ 283 K ]
  Authors: Andrzej Misiuk, H.B. Surma, I.V. Antonova, V.P. Popov, Jadwiga Bak-Misiuk, M. Lopez, A. Romano-Rodríguez, Adam Barcz, J. Jun
• p351 The Nature of Precursors for the Thermal Donor Formation in Silicon   [ 307 K ]
  Authors: V.B. Neimash, O.O. Puzenko, O.M. Kabaldin, A. Kraitchinskii, M. Kras'ko, C. Claeys, Eddy Simoen
• p359 Photoluminescence of Erbium-Doped Silicon: Temperature Dependence   [ 373 K ]
  Authors: C.A.J. Ammerlaan, D.T.X. Thao, T. Gregorkiewicz, Boris A. Andreev, Z.F. Krasil'nik
• p365 Rare Earth Impurities and Impurity-Related Centers in Silicon   [ 262 K ]
  Authors: Valentin V. Emtsev, D.S. Poloskin, Elena I. Shek, N.A. Sobolev, Jürgen Michel, Lionel C. Kimerling
• p371 Defect Engineering in Si: Ho Light-Emitting Structure Technology   [ 260 K ]
  Authors: N.A. Sobolev, A.M. Emel'yanov, R.N. Kyutt, Yu.A. Nikolaev
• p377 Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si_1-xGe_x Epitaxial Structures Obtained by MBE Method   [ 286 K ]
  Authors: L.K. Orlov, A.V. Potapov, N.L. Ivina, E.A. Steinman, V.I. Vdovin
• p385 Pre-Cavities Defect Distribution in He Implanted Silicon Studied by Slow Positron Beam   [ 299 K ]
  Authors: Roberto S. Brusa, Grzegorz P. Karwasz, Antonio Zecca, F. Corni, R. Tonini, G. Ottaviani
• p391 Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers   [ 299 K ]
  Authors: D. Panknin, Wolfgang Skorupa, H. Wirth, M. Voelskow, A. Mücklich, W. Anwand, Gerhard Brauer, A. Pérez-Rodríguez, I. Bakočević, J.M. Morante
• p397 In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions   [ 326 K ]
  Authors: Nikolai Yarykin, C.R. Cho, R.A. Zuhr, George A. Rozgonyi
• p403 Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals   [ 383 K ]
  Authors: V.P. Markevich, L.I. Murin, J. Lennart Lindström, Masashi Suezawa
• p409 The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon   [ 274 K ]
  Authors: Alexander G. Ulyashin, A.N. Petlitskii, Reinhart Job, Wolfgang R. Fahrner, A.K. Fedotov, A.I. Stognii
• p417 Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour   [ 321 K ]
  Authors: Martin Kittler, Vitaly V. Kveder, Wolfgang Schröter
• p423 Experimental and Theoretical Study on Interaction Processes for 60° Short Dislocation Segments with Precipitation Centers in Si-Crystals   [ 245 K ]
  Authors: V.A. Makara, L.P. Steblenko, A.N. Kolomiets