The Effects of Implanted Arsenic on Ti-Silicide Formation |
| Journal |
Solid State Phenomena (Volume 71) |
| Volume |
Special Defects in Semiconducting Materials |
| Edited by |
R.P. Agarwala |
| Pages |
147-172 |
| DOI |
10.4028/www.scientific.net/SSP.71.147 |
| Citation |
M. Milosavljević et al., 1999, Solid State Phenomena, 71, 147 |
| Authors |
M. Milosavljević, N. Bibić, D. Peruško, C. Jeynes, U. Bangert |
| Keywords |
Annealing, Arsenic Ion Implantation, Electron Microscopy, Interface, Ion Beam Mixing, Phase Formation, RBS Analysis, Reaction Kinetics, Silicidation, Silicon, Titanium Silicide |
| Full Paper |
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