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An Exploration on the Bridge Formation Mechanism of Cylindrical Storage Poly-Silicon by Water Marks in High Performance 4Gigabit DRAM Capacitor

Journal Solid State Phenomena (Volumes 76 - 77)
Volume Ultra Clean Processing of Silicon Surfaces
Edited by Marc Heyns, Marc Meuris and Paul Mertens
Pages 15-18
DOI 10.4028/www.scientific.net/SSP.76-77.15
Authors Kun Tack Lee, Woo Gwan Shim, Hyung Ho Ko, Ho Young Kim, Yong Pil Han, Sang Rok Hah, Joo Tae Moon
Keywords Capacitor, DRAMs, Water Marks
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