Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics |
| Journal |
Solid State Phenomena (Volumes 76 - 77) |
| Volume |
Ultra Clean Processing of Silicon Surfaces V |
| Edited by |
Marc Heyns, Marc Meuris and Paul Mertens |
| Pages |
165-168 |
| DOI |
10.4028/www.scientific.net/SSP.76-77.165 |
| Citation |
Joong S. Jeon et al., 2001, Solid State Phenomena, 76-77, 165 |
| Authors |
Joong S. Jeon, Bob Ogle |
| Keywords |
Chemical Oxide, CV, Leakage Current, RTCVD, Stack Gate Dielectrics |
| Full Paper |
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