Electronic Properties of Wet-Chemically Prepared Oxide Layers |
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| Journal | Solid State Phenomena (Volumes 76 - 77) |
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| Volume | Ultra Clean Processing of Silicon Surfaces V |
| Edited by | Marc Heyns, Marc Meuris and Paul Mertens |
| Pages | 181-184 |
| DOI | 10.4028/www.scientific.net/SSP.76-77.181 |
| Citation | H. Angermann et al., 2001, Solid State Phenomena, 76-77, 181 |
| Authors | H. Angermann, W. Henrion, M. Rebien |
| Keywords | Interface States (or Traps), Spectroscopic Ellipsometry (SE), Wet Chemical Oxides |
| Full Paper | 
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