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The Effect of Ion Implantation on the Metal Contamination of Silicon Surfaces in Aqueous Solution, p.7
Barium, Strontium and Bismuth Contamination in CMOS Processes, p.9
An Exploration on the Bridge Formation Mechanism of Cylindrical Storage Poly-Silicon by Water Marks in High Performance 4Gigabit DRAM Capacitor, p.15
Chemical Processing and Materials Compatibility of High-K Dielectric Materials for Advanced Gate Stacks, p.19
Wettability Modification of Polysilicon for Stiction Reduction in Silicon Based Micro-electromechanical Structures, p.23
Dual Gate Oxide for 0.18μm Technologies and Below: Optimization of the Wet Processing Sequence, p.27
New Aqueous Clean for Aluminum Interconnects: Part I. Fundamentals, p.31
Metal Wet Cleaning with No Corrosion: A Novel Approach, p.35
Non-Contact Post Cu CMP Cleaning Using Megasonic Energy, p.39

Home > Solid State Phenomena > Ultra Clean Processing of Silicon Surfaces V > Wettability Modification of Polysilicon for...

Paper Title:

Wettability Modification of Polysilicon for Stiction Reduction in Silicon Based Micro-electromechanical Structures

Periodical	Solid State Phenomena (Volumes 76 - 77)
Main Theme	Ultra Clean Processing of Silicon Surfaces V
Edited by	Marc Heyns, Marc Meuris and Paul Mertens
Pages	23-26
DOI	10.4028/www.scientific.net/SSP.76-77.23
Citation	Angeles Marcia Almanza-Workman et al., 2001, Solid State Phenomena, 76-77, 23
Authors	Angeles Marcia Almanza-Workman, Srini Raghavan, Pierre Deymier, David J. Monk, Ray Roop
Keywords	Poly-Silicon, Self-Assembled Monolayer (SAM), Stiction, Water Dispersible Silanes
Price	US$ 28,-

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