Paper Title:
Luminescence Centers Characterization in A2B6 Semiconductors and Their Thin Diffusion Layers by Cathodoluminescence Defectoscopy
  Abstract

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Periodical
Solid State Phenomena (Volumes 78-79)
Edited by
H. Tomokage and T. Sekiguchi
Pages
127-132
DOI
10.4028/www.scientific.net/SSP.78-79.127
Citation
M.V. Nazarov, "Luminescence Centers Characterization in A2B6 Semiconductors and Their Thin Diffusion Layers by Cathodoluminescence Defectoscopy", Solid State Phenomena, Vols. 78-79, pp. 127-132, 2001
Online since
April 2001
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Price
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