Paper Title:
Radiation Induced Lattice Defects in n-MOSFETs and Their Effects on Device Performance
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 78-79)
Edited by
H. Tomokage and T. Sekiguchi
Pages
205-210
DOI
10.4028/www.scientific.net/SSP.78-79.205
Citation
K. Kobayashi, H. Ohyama, M. Nakabayashi, E. Simoen, C. Claeys, Y. Takami, M. Yoneoka, K. Hayama, S. Kohiki, "Radiation Induced Lattice Defects in n-MOSFETs and Their Effects on Device Performance", Solid State Phenomena, Vols. 78-79, pp. 205-210, 2001
Online since
April 2001
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Price
$32.00
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