Paper Title:
Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 78-79)
Edited by
H. Tomokage and T. Sekiguchi
Pages
253-258
DOI
10.4028/www.scientific.net/SSP.78-79.253
Citation
W. Seifert, M. Kittler, "Modeling the Influence of Dislocations on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination", Solid State Phenomena, Vols. 78-79, pp. 253-258, 2001
Online since
April 2001
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Price
$32.00
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