Paper Title:
Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 78-79)
Edited by
H. Tomokage and T. Sekiguchi
Pages
313-318
DOI
10.4028/www.scientific.net/SSP.78-79.313
Citation
K. Yokota, Y. Tachino, S. Shimizu, K. Nakamura, Y. Sekine, M. Watanabe, H. Takano, "Abnormal Redistribution of S Atoms Implanted into GaAs during Si Thermal Doping", Solid State Phenomena, Vols. 78-79, pp. 313-318, 2001
Online since
April 2001
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Price
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