Paper Title:
Characterization of Defects in 6H-Type Epitaxially Grown Silicon Carbide Wafer by Cathodoluminescence Microscopy
  Abstract

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Periodical
Solid State Phenomena (Volumes 78-79)
Edited by
H. Tomokage and T. Sekiguchi
Pages
377-380
DOI
10.4028/www.scientific.net/SSP.78-79.377
Citation
T. Isshiki, H. Saijo, S. Nishino, M. Shiojiri, "Characterization of Defects in 6H-Type Epitaxially Grown Silicon Carbide Wafer by Cathodoluminescence Microscopy", Solid State Phenomena, Vols. 78-79, pp. 377-380, 2001
Online since
April 2001
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