Paper Title:
The Investigation of Charge Transport Properties of SOI Semiconductor Devices Using a Heavy Ion Microbeam
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 78-79)
Edited by
H. Tomokage and T. Sekiguchi
Pages
395-400
DOI
10.4028/www.scientific.net/SSP.78-79.395
Citation
T. Hirao, J. S. Laird, H. Mori, S. Onoda, H. Itoh, "The Investigation of Charge Transport Properties of SOI Semiconductor Devices Using a Heavy Ion Microbeam", Solid State Phenomena, Vols. 78-79, pp. 395-400, 2001
Online since
April 2001
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Price
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