Paper Title:

Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC

Periodical Solid State Phenomena (Volumes 78 - 79)
Main Theme Beam Injection Assessment of Microstructures in Semiconductors
Edited by H. Tomokage and T. Sekiguchi
Pages 65-72
DOI 10.4028/www.scientific.net/SSP.78-79.65
Citation O.F. Vyvenko et al., 2001, Solid State Phenomena, 78-79, 65
Authors O.F. Vyvenko, O. Krüger, Martin Kittler
Keywords Contaminated Dislocations, Electron Beam Induced Current (EBIC), Hydrogen Passivation, Multicrystalline Silicon
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