Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC |
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| Journal | Solid State Phenomena (Volumes 78 - 79) |
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| Volume | Beam Injection Assessment of Microstructures in Semiconductors |
| Edited by | H. Tomokage and T. Sekiguchi |
| Pages | 65-72 |
| DOI | 10.4028/www.scientific.net/SSP.78-79.65 |
| Citation | O.F. Vyvenko et al., 2001, Solid State Phenomena, 78-79, 65 |
| Authors | O.F. Vyvenko, O. Krüger, Martin Kittler |
| Keywords | Contaminated Dislocations, Electron Beam Induced Current (EBIC), Hydrogen Passivation, Multicrystalline Silicon |
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