Paper Title:
Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC
| Periodical |
Solid State Phenomena (Volumes 78 - 79)
|
| Main Theme |
Beam Injection Assessment of Microstructures in Semiconductors
|
| Edited by |
H. Tomokage and T. Sekiguchi |
| Pages |
65-72 |
| DOI |
10.4028/www.scientific.net/SSP.78-79.65 |
| Citation |
O.F. Vyvenko et al., 2001, Solid State Phenomena, 78-79, 65 |
| Authors |
O.F. Vyvenko, O. Krüger, Martin Kittler |
| Keywords |
Contaminated Dislocations, Electron Beam Induced Current (EBIC), Hydrogen Passivation, Multicrystalline Silicon |
| Price |
US$ 28,- |