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Recombination Properties of Defects in Gallium Nitride

Journal Solid State Phenomena (Volumes 78 - 79)
Volume Beam Injection Assessment of Microstructures in Semiconductors
Edited by H. Tomokage and T. Sekiguchi
Pages 95-102
DOI 10.4028/www.scientific.net/SSP.78-79.95
Authors Antonio Castaldini, Anna Cavallini, L. Polenta, Giancarlo Salviati
Keywords CL Analyses, Deep Levels, Defect, EBIC Analyses, Gallium Nitride, Photocurrent Persistence, Recombination Activity
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