Recombination Properties of Defects in Gallium Nitride |
| Journal |
Solid State Phenomena (Volumes 78 - 79) |
| Volume |
Beam Injection Assessment of Microstructures in Semiconductors |
| Edited by |
H. Tomokage and T. Sekiguchi |
| Pages |
95-102 |
| DOI |
10.4028/www.scientific.net/SSP.78-79.95 |
| Citation |
Antonio Castaldini et al., 2001, Solid State Phenomena, 78-79, 95 |
| Authors |
Antonio Castaldini, Anna Cavallini, L. Polenta, Giancarlo Salviati |
| Keywords |
CL Analyses, Deep Level, Defect, EBIC Analyses, Gallium Nitride, Photocurrent Persistence, Recombination Activity |
| Full Paper |
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