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Polycrystalline Semiconductors VI

Solid State Phenomena Volumes 80 - 81

• Papers
• Abstracts

• p3 Charge Transport in Polycrystalline Organic Field-Effect Transistors   [ 617 K ]
  Authors: Gilles Horowitz
• p15 High Quality Textured C₆₀ Thin Films on a Mica Substrate: Growth, Crystalline Structure, Electrical and Photoelectric Properties   [ 303 K ]
  Authors: E.A. Katz, D. Faiman, S. Shtutina, A. Isakina, K. Yagotintsev, K. Iakoubovskii
• p21 Electrical Properties of Grain Boundaries in Titanate Ceramics   [ 797 K ]
  Authors: Rainer Hagenbeck
• p33 Local Potential at Atomically Abrupt Oxide Grain Boundaries by Scanning Probe Microscopy   [ 677 K ]
  Authors: Dawn A. Bonnell, Sergei V. Kalinin
• p47 Large-Area Polycrystalline p-Type Silicon Films Produced by the Hot Wire Technique   [ 380 K ]
  Authors: Isabel Ferreira, Rodrigo Martins, A. Cabrita, Francisco Manuel Braz Fernandes, Elvira Fortunato
• p53 The Influence of the Use of Different Catalyzers in Hot-Wire CVD for the Deposition of Polycrystalline Silicon Thin Films   [ 276 K ]
  Authors: P.A.T.T. van Veenendaal, Jatindra K. Rath, O.L.J. Gijzeman, Ruud E.I. Schropp
• p59 Boron-Doped Polysilicon: Growth Kinetics and Structural Study of Low-Pressure Chemical Vapour Deposited Films in the Case of High Doping Levels   [ 343 K ]
  Authors: B. Caussat, E. Scheid, B. Legros-de Mauduit, R. Berjoan
• p65 Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C   [ 438 K ]
  Authors: Y. Leconte, Richard Rizk, F. Gourbilleau, P. Voivenel, M. Lejeune, C. Goncalves
• p71 Effects of Ion Bombardment upon Microcrystalline Silicon Growth   [ 319 K ]
  Authors: Billel Kalache, R. Brenot, V. Tripathi, Satyendra Kumar, R. Vanderhaghen, Pere Roca i Cabarrocas
• p77 Nucleation and Growth of Hydrogenated Microcrystalline Silicon Films: New Insights from Scanning Probe Microscopies   [ 374 K ]
  Authors: J. Herion, Ch. Ross
• p83 Poly-Crystallized SiGe Thin Films in a Low-Temperature Process   [ 222 K ]
  Authors: Takashi Noguchi
• p89 Effect of Pressure and Temperature on the Electrical Properties of LPCVD Silicon-Germanium Thin Films   [ 293 K ]
  Authors: Denis Guillet, M. Sarret, H. Lhermite, O. Bonnaud
• p95 Intra-Grain Defects - Limiting Factor for Low-Temperature Polycrystalline Silicon Films?   [ 360 K ]
  Authors: Thomas A. Wagner, L. Oberbeck, R.B. Bergmann, Jens Werner
• p101 Structural Effects in Ultra-Thin Iridium Silicide   [ 344 K ]
  Authors: U. Hörmann, T. Remmele, C. Schür, M. Albrecht, Horst P. Strunk, H. Grünleitner, M. Schulz
• p109 Hydrogen Diffusion through Deformed Si-Si Bonds at Grain Boundaries in Hot-Wire CVD Polycrystalline Silicon Films   [ 368 K ]
  Authors: Jatindra K. Rath, Ruud E.I. Schropp, W. Beyer