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Charge Transport in Polycrystalline Organic Field-Effect Transistors, p.3
High Quality Textured C₆₀ Thin Films on a Mica Substrate: Growth, Crystalline Structure, Electrical and Photoelectric Properties, p.15
Electrical Properties of Grain Boundaries in Titanate Ceramics, p.21
Local Potential at Atomically Abrupt Oxide Grain Boundaries by Scanning Probe Microscopy, p.33
Large-Area Polycrystalline p-Type Silicon Films Produced by the Hot Wire Technique, p.47
The Influence of the Use of Different Catalyzers in Hot-Wire CVD for the Deposition of Polycrystalline Silicon Thin Films, p.53
Boron-Doped Polysilicon: Growth Kinetics and Structural Study of Low-Pressure Chemical Vapour Deposited Films in the Case of High Doping Levels, p.59
Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C, p.65
Effects of Ion Bombardment upon Microcrystalline Silicon Growth, p.71

Home > Solid State Phenomena > Polycrystalline Semiconductors VI > Local Potential at Atomically Abrupt Oxide Grain...

Paper Title:

Local Potential at Atomically Abrupt Oxide Grain Boundaries by Scanning Probe Microscopy

Periodical	Solid State Phenomena (Volumes 80 - 81)
Main Theme	Polycrystalline Semiconductors VI
Edited by	O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner
Pages	33-46
DOI	10.4028/www.scientific.net/SSP.80-81.33
Citation	Dawn A. Bonnell et al., 2001, Solid State Phenomena, 80-81, 33
Authors	Dawn A. Bonnell, Sergei V. Kalinin
Keywords	Electrostatic Force Microscopy, Grain Boundary (GB), Oxide, Scanning Surface Potential Microscopy, Transport Property
Price	US$ 28,-

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