Boron-Doped Polysilicon: Growth Kinetics and Structural Study of Low-Pressure Chemical Vapour Deposited Films in the Case of High Doping Levels |
| Journal |
Solid State Phenomena (Volumes 80 - 81) |
| Volume |
Polycrystalline Semiconductors VI |
| Edited by |
O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner |
| Pages |
59-64 |
| DOI |
10.4028/www.scientific.net/SSP.80-81.59 |
| Citation |
B. Caussat et al., 2001, Solid State Phenomena, 80-81, 59 |
| Authors |
B. Caussat, E. Scheid, B. Legros-de Mauduit, R. Berjoan |
| Keywords |
Boron, Crystallization, Elaboration, Kinetics, Silicon |
| Full Paper |
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