Boron-Doped Polysilicon: Growth Kinetics and Structural Study of Low-Pressure Chemical Vapour Deposited Films in the Case of High Doping Levels |
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| Journal | Solid State Phenomena (Volumes 80 - 81) |
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| Volume | Polycrystalline Semiconductors VI |
| Edited by | O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner |
| Pages | 59-64 |
| DOI | 10.4028/www.scientific.net/SSP.80-81.59 |
| Authors | B. Caussat, E. Scheid, B. Legros-de Mauduit, R. Berjoan |
| Keywords | Boron, Crystallisation, Elaboration, Kinetic, Silicon |
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