Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C |
| Journal |
Solid State Phenomena (Volumes 80 - 81) |
| Volume |
Polycrystalline Semiconductors VI |
| Edited by |
O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner |
| Pages |
65-70 |
| DOI |
10.4028/www.scientific.net/SSP.80-81.65 |
| Citation |
Y. Leconte et al., 2001, Solid State Phenomena, 80-81, 65 |
| Authors |
Y. Leconte, Richard Rizk, F. Gourbilleau, P. Voivenel, M. Lejeune, C. Goncalves |
| Keywords |
Electron Microscopy, Raman Scattering, Silicon Epitaxial Growth |
| Full Paper |
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