Paper Title:
Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 80-81)
Edited by
O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner
Pages
65-70
DOI
10.4028/www.scientific.net/SSP.80-81.65
Citation
Y. Leconte, R. Rizk, F. Gourbilleau, P. Voivenel, M. Lejeune, C. Goncalves, "Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C", Solid State Phenomena, Vols. 80-81, pp. 65-70, 2001
Online since
November 2001
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