Quasi-Epitaxial Growth of Silicon Layers by Hydrogen Reactive Magnetron Sputtering at Temperatures as Low as 200 °C |
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| Journal | Solid State Phenomena (Volumes 80 - 81) |
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| Volume | Polycrystalline Semiconductors VI |
| Edited by | O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner |
| Pages | 65-70 |
| DOI | 10.4028/www.scientific.net/SSP.80-81.65 |
| Authors | Y. Leconte, Richard Rizk, F. Gourbilleau, P. Voivenel, M. Lejeune, C. Goncalves |
| Keywords | Electron Microscopy, Raman Scattering, Silicon Epitaxial Growth |
| Full Paper | 
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