Intra-Grain Defects - Limiting Factor for Low-Temperature Polycrystalline Silicon Films? |
| Journal |
Solid State Phenomena (Volumes 80 - 81) |
| Volume |
Polycrystalline Semiconductors VI |
| Edited by |
O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk and J.H. Werner |
| Pages |
95-100 |
| DOI |
10.4028/www.scientific.net/SSP.80-81.95 |
| Citation |
Thomas A. Wagner et al., 2001, Solid State Phenomena, 80-81, 95 |
| Authors |
Thomas A. Wagner, L. Oberbeck, R.B. Bergmann, Jens Werner |
| Keywords |
Deep-Level Transient Spectroscopy, Diffusion Length, Photoluminescence (PL), Silicon Thin Films |
| Full Paper |
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