Gettering anf Defect Engineering in Semiconductor Technology IX
| Paper Title | Page |
|---|---|
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Silicon Wafer Requirements for ULSI Device Processing Authors: Francesca Illuzzi |
1 |
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Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing Authors: Robert J. Falster |
9 |
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On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals Authors: Wilfried von Ammon, Robert Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf |
17 |
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Authors: Kozo Nakamura, Toshiaki Saishoji, Junsuke Tomioka |
25 |
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Authors: Kazutaka Terashima, Hajime Noguchi |
35 |
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Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth Authors: V.V. Kalaev, V.A. Zabelin, Yuri N. Makarov |
41 |
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Authors: Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, T. Ono, Eiichi Asayama, Y. Koike, S. Sadamitsu |
49 |
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Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies Authors: L.I. Murin, V.P. Markevich, J. Lennart Lindström, Mats Kleverman, J. Hermansson, T. Hallberg, Bengt G. Svensson |
57 |
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Infrared Absorption Analysis of Nitrogen in Czochralski Silicon Authors: Y. Yamanaka, Hiroshi Harada, K. Tanahashi, T. Mikayama, N. Inoue |
63 |
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Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers Authors: A. Karoui, F.S. Karoui, De Ren Yang, George A. Rozgonyi |
69 |