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Gettering anf Defect Engineering in Semiconductor Technology IX

Solid State Phenomena Volumes 82 - 84

• Papers
• Abstracts

• p1 Silicon Wafer Requirements for ULSI Device Processing   [ 267 K ]
  Authors: Francesca Illuzzi
• p9 Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing   [ 562 K ]
  Authors: Robert Falster
• p17 On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals   [ 464 K ]
  Authors: Wilfried von Ammon, Robert Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf
• p25 Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior   [ 468 K ]
  Authors: Kozo Nakamura, Toshiaki Saishoji, Junsuke Tomioka
• p35 The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions   [ 393 K ]
  Authors: Kazutaka Terashima, Hajime Noguchi
• p41 Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth   [ 351 K ]
  Authors: V.V. Kalaev, V.A. Zabelin, Yuri N. Makarov
• p49 Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers   [ 480 K ]
  Authors: Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, T. Ono, Eiichi Asayama, Y. Koike, S. Sadamitsu
• p57 Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies   [ 295 K ]
  Authors: L.I. Murin, V.P. Markevich, J. Lennart Lindström, Mats Kleverman, J. Hermansson, T. Hallberg, Bengt G. Svensson
• p63 Infrared Absorption Analysis of Nitrogen in Czochralski Silicon   [ 210 K ]
  Authors: Y. Yamanaka, Hiroshi Harada, K. Tanahashi, T. Mikayama, N. Inoue
• p69 Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers   [ 647 K ]
  Authors: A. Karoui, F.S. Karoui, De Ren Yang, George A. Rozgonyi
• p75 Optical Properties of Oxygen Agglomerates in Silicon   [ 242 K ]
  Authors: Simona Binetti, Sergio Pizzini, E. Leoni, R. Somaschini, Antonio Castaldini, Anna Cavallini
• p81 Positron Annihilation Studies of Oxygen Precipitation in Silicon and of Nano-Precipitates in Si-Rich SiO₂ Films: Role of Vacancy-Like Defects   [ 356 K ]
  Authors: Roberto S. Brusa, W. Deng, Grzegorz P. Karwasz, Antonio Zecca
• p87 Silicon Isotope Shifts of the 648-cm^-1 Infrared Absorption Line of Oxygen in Silicon   [ 208 K ]
  Authors: Hiroshi Yamada-Kaneta
• p93 Thermal Donors in Silicon Implanted with Rare Earth Impurities   [ 225 K ]
  Authors: Valentin V. Emtsev, C.A.J. Ammerlaan, Boris A. Andreev, Gagik A. Oganesyan, D.S. Poloskin, E.I. Shek, N.A. Sobolev
• p99 Interfacial Oxygen Thermodonor Formation in Plasma-Hydrogenated Silicon   [ 205 K ]
  Authors: G.N. Kamaev, V.V. Bolotov, S.A. Chern'aev, M.D. Efremov